Polycrystalline diamond compacts and related drill bits

ABSTRACT

In an embodiment, a polycrystalline diamond compact (“PDC”) comprises a cemented carbide substrate including a first cemented carbide portion and a second cemented carbide portion bonded to the first cemented carbide portion and exhibiting an erosion resistance that is greater than the first cemented carbide portion. The PDC further comprises a polycrystalline diamond (“PCD”) table bonded to the first cemented carbide portion. The PCD table includes a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween, with the plurality of bonded diamond grains defining a plurality of interstitial regions.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. application Ser. No.12/649,784 filed on 30 Dec. 2009 (now U.S. Pat. No. 8,216,677 issued on10 Jul. 2012), which claims the benefit of U.S. Provisional ApplicationNo. 61/164,642 filed on 30 Mar. 2009, the contents of each of theforegoing applications are incorporated herein, in their entirety, bythis reference.

BACKGROUND

Wear-resistant, polycrystalline diamond compacts (“PDCs”) are utilizedin a variety of mechanical applications. For example, PDCs are used indrilling tools (e.g., cutting elements, gage trimmers, etc.), machiningequipment, bearing apparatuses, wire-drawing machinery, and in othermechanical apparatuses.

PDCs have found particular utility as superabrasive cutting elements inrotary drill bits, such as roller-cone drill bits and fixed-cutter drillbits. A PDC cutting element typically includes a superabrasive diamondlayer commonly known as a diamond table. The diamond table is formed andbonded to a substrate using a high-pressure/high-temperature (“HPHT”)process. The PDC cutting element may also be brazed directly into apreformed pocket, socket, or other receptacle formed in a bit body. Thesubstrate may often be brazed or otherwise joined to an attachmentmember, such as a cylindrical backing. A rotary drill bit typicallyincludes a number of PDC cutting elements affixed to the bit body. It isalso known that a stud carrying the PDC may be used as a PDC cuttingelement when mounted to a bit body of a rotary drill bit bypress-fitting, brazing, or otherwise securing the stud into a receptacleformed in the bit body.

Conventional PDCs are normally fabricated by placing a cemented carbidesubstrate into a container with a volume of diamond particles positionedon a surface of the cemented carbide substrate. A number of suchcontainers may be loaded into an HPHT press. The substrate(s) and volumeof diamond particles are then processed under HPHT conditions in thepresence of a catalyst material that causes the diamond particles tobond to one another to form a matrix of bonded diamond grains defining apolycrystalline diamond (“PCD”) table. The catalyst material is often ametal-solvent catalyst (e.g., cobalt, nickel, iron, or alloys thereof)that is used for promoting intergrowth of the diamond particles.

In one conventional approach, a constituent of the cemented carbidesubstrate, such as cobalt from a cobalt-cemented tungsten carbidesubstrate, liquefies and sweeps from a region adjacent to the volume ofdiamond particles into interstitial regions between the diamondparticles during the HPHT process. The cobalt acts as a catalyst topromote intergrowth between the diamond particles, which results information of a matrix of bonded diamond grains having diamond-to-diamondbonding therebetween, with interstitial regions between the bondeddiamond grains being occupied by the solvent catalyst.

The presence of the solvent catalyst in the PCD table is believed toreduce the thermal stability of the PCD table at elevated temperatures.For example, the difference in thermal expansion coefficient between thediamond grains and the solvent catalyst is believed to lead to chippingor cracking of the PCD table during drilling or cutting operations,which consequently can degrade the mechanical properties of the PCDtable or cause failure. Additionally, some of the diamond grains canundergo a chemical breakdown or back-conversion to graphite viainteraction with the solvent catalyst. At elevated high temperatures,portions of diamond grains may transform to carbon monoxide, carbondioxide, graphite, or combinations thereof, causing degradation of themechanical properties of the PCD table.

Despite the availability of a number of different PDCs, manufacturersand users of PDCs continue to seek PDCs that exhibit improved toughness,wear resistance, and/or thermal stability.

SUMMARY

Embodiments of the invention relate to PDCs including a PCD table and/ora cemented carbide substrate that includes at least one of chromiumcarbide, tantalum carbide, or a tantalum carbide-tungsten carbide solidsolution. Chromium carbide, tantalum carbide, and a tantalumcarbide-tungsten carbide solid solution may improve at least one ofabrasion resistance, erosion resistance, corrosion resistance, orthermal stability of the PCD table, and erosion and/or corrosionresistance of the cemented carbide substrate.

In an embodiment, a PDC includes a cemented carbide substrate includingtungsten carbide and chromium carbide. The PDC further includes a PCDtable bonded to the cemented carbide substrate. The PCD table includes aplurality of bonded diamond grains exhibiting diamond-to-diamond bondingtherebetween and defining a plurality of interstitial regions. The PCDtable further includes chromium carbide therein.

In an embodiment, a PDC includes a cemented carbide substrate includingtungsten carbide and at least one of tantalum carbide or a tantalumcarbide-tungsten carbide solid solution. The PDC further includes a PCDtable bonded to the cemented carbide substrate. The PCD table includes aplurality of bonded diamond grains exhibiting diamond-to-diamond bondingtherebetween and defining a plurality of interstitial regions. The PCDtable further includes at least one of tantalum carbide or a tantalumcarbide-tungsten carbide solid solution therein.

In an embodiment, a PDC includes a cemented carbide substrate. The PDCfurther includes a PCD table bonded to the cemented carbide substrate.The PCD table includes a plurality of bonded diamond grains exhibitingdiamond-to-diamond bonding therebetween and defining a plurality ofinterstitial regions. The PCD table further includes chromium carbideand at least one of tantalum carbide or a tantalum carbide-tungstencarbide solid solution therein.

In an embodiment, a method of manufacturing a PDC includes positioning amixture adjacent to a cemented carbide substrate. The mixture includes aplurality of diamond particles, and at least one of chromium carbide ortantalum carbide. The method further includes subjecting the mixture andthe cemented carbide substrate to an HPHT process to sinter theplurality of diamond particles.

In an embodiment, a method of manufacturing a PDC includes positioning adiamond volume adjacent to a cemented carbide substrate. The cementedcarbide substrate includes tungsten carbide and at least one of chromiumcarbide, tantalum carbide, or a tantalum carbide-tungsten carbide solidsolution. The method further includes subjecting the diamond volume andthe cemented carbide substrate to an HPHT process. In certainembodiments, the diamond volume comprises diamond powder or an at leastpartially leached PCD table.

In an embodiment, a PDC comprises a cemented carbide substrate includinga first cemented carbide portion exhibiting a first concentration ofchromium carbide and a second cemented carbide portion bonded to thefirst cemented carbide portion and exhibiting a second concentration ofchromium carbide that is greater than the first concentration. The PDCfurther comprises a PCD table bonded to the first cemented carbideportion. The PCD table includes a plurality of bonded diamond grainsexhibiting diamond-to-diamond bonding therebetween, with the pluralityof bonded diamond grains defining a plurality of interstitial regions.The PCD table includes chromium present in a concentration less thanabout 0.25 weight % (“wt %”).

In an embodiment, a method of manufacturing a PDC includes positioning afirst cemented carbide portion between a diamond volume and a secondcemented carbide portion to form an assembly. The first cemented carbideportion is substantially free of chromium and the second cementedcarbide portion includes chromium carbide. The method further includessubjecting the assembly to an HPHT process to form the PDC.

Other embodiments include applications utilizing the disclosed PDCs invarious articles and apparatuses, such as rotary drill bits, bearingapparatuses, wire-drawing dies, machining equipment, and other articlesand apparatuses.

Features from any of the disclosed embodiments may be used incombination with one another, without limitation. In addition, otherfeatures and advantages of the present disclosure will become apparentto those of ordinary skill in the art through consideration of thefollowing detailed description and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings illustrate several embodiments of the invention, whereinidentical reference numerals refer to identical elements or features indifferent views or embodiments shown in the drawings.

FIG. 1A is an isometric view of an embodiment of a PDC.

FIG. 1B is a cross-sectional view of the PDC shown in FIG. 1A takenalong line 1B-1B thereof.

FIG. 2 is a cross-sectional view of the PDC shown in FIG. 1Billustrating a depletion region adjacent the PCD table from whichchromium carbide, tantalum carbide, or a tantalum carbide-tungstencarbide solid solution is depleted according to an embodiment.

FIG. 3 is a cross-sectional view of the PDC shown in FIG. 1B afterleaching a region of the PCD table that is remote from the cementedcarbide substrate according to an embodiment.

FIG. 4 is a cross-sectional view of the PDC shown in FIG. 1B afterinfiltrating a region of the PCD table with an infiltrant according toan embodiment.

FIG. 5 is a cross-sectional view of another embodiment of a PDC in whichthe concentration of chromium in the PCD table thereof is minimized tofacilitate leaching while the substrate includes chromium carbide toenhance erosion and/or corrosion resistance thereof.

FIG. 6A is a cross-sectional view of yet another embodiment of a PDC inwhich the concentration of chromium in the PCD table thereof isminimized to facilitate leaching while the substrate includes chromiumcarbide to enhance erosion and/or corrosion resistance thereof.

FIG. 6B is a cross-sectional view of a further embodiment of a PDC inwhich the concentration of chromium in the PCD table thereof isminimized to facilitate leaching while the substrate includes chromiumcarbide to enhance erosion and/or corrosion resistance thereof.

FIG. 7 is a cross-sectional view of an assembly to be HPHT processed toform the PDC shown in FIGS. 1A and 1B according to an embodiment ofmethod.

FIG. 8 is a cross-sectional view of an assembly to be HPHT processed toform the PDC shown in FIGS. 1A and 1B according to another embodiment ofmethod.

FIG. 9A is a cross-sectional view of an assembly to be HPHT processed toform the PDC shown in FIG. 5 according to yet another embodiment ofmethod.

FIG. 9B is a cross-sectional view of an assembly to be HPHT processed toform the PDC shown in FIG. 6A according to yet another embodiment ofmethod.

FIG. 10A is an isometric view of an embodiment of a rotary drill bitthat may employ one or more of the disclosed PDC embodiments.

FIG. 10B is a top elevation view of the rotary drill bit shown in FIG.10A.

FIG. 11 is a graph of volume of PDC removed versus volume of workpieceremoved for comparative working examples 1 and 2, and working example 3according to an embodiment of the invention.

FIG. 12 is a graph of volume of PDC removed versus volume of workpieceremoved for comparative working examples 4 and 5, and working example 6according to an embodiment of the invention.

FIG. 13 is a graph of volume of PDC removed versus volume of workpieceremoved for comparative working example 7 and working examples 8 and 9according to embodiments of the invention.

FIG. 14 is a graph of volume of PDC removed versus volume of workpieceremoved for comparative working example 10 and working examples 13-18according to embodiments of the invention.

FIG. 15 is a graph of volume of PDC removed versus volume of workpieceremoved for comparative working examples 19 and 20 and working example21 according to an embodiment of the invention.

DETAILED DESCRIPTION

Embodiments of the invention relate to PDCs including a PCD table and/ora cemented carbide substrate that includes at least one of chromiumcarbide, tantalum carbide, or a tantalum carbide-tungsten carbide solidsolution. Embodiments of methods of fabricating such PDCs are alsodisclosed. Chromium carbide, tantalum carbide, and a tantalumcarbide-tungsten carbide solid solution may improve at least one ofabrasion resistance, erosion resistance, corrosion resistance, orthermal stability of the PCD table, and erosion and/or corrosionresistance of the cemented carbide substrate. The PDCs disclosed hereinmay be used in a variety of applications, such as rotary drill bits,bearing apparatuses, wire-drawing dies, machining equipment, and otherarticles and apparatuses.

FIGS. 1A and 1B are isometric and cross-sectional views, respectively,of a PDC 100 according to an embodiment. The PDC 100 includes a cementedcarbide substrate 102 including at least tungsten carbide grainscemented with a metallic cementing constituent, such as iron, nickel,cobalt, or alloys thereof. The cemented carbide substrate 102 includesan interfacial surface 104. In the illustrated embodiment, theinterfacial surface 104 is substantially planar. However, in otherembodiments, the interfacial surface 104 may exhibit a nonplanartopography.

The PDC 100 further includes a PCD table 106 bonded to the interfacialsurface 104 of the cemented carbide substrate 102. The PCD table 106includes a plurality of directly bonded-together diamond grainsexhibiting diamond-to-diamond bonding therebetween (e.g., sp³ bonding).The plurality of directly bonded-together diamond grains defines aplurality of interstitial regions. The PCD table 106 further includes ametal-solvent catalyst or infiltrant (e.g., iron, nickel, cobalt, oralloys thereof) that may be disposed in at least a portion of theinterstitial regions, which was infiltrated from the cemented carbidesubstrate 102. For example, the metal-solvent catalyst or infiltrant maybe disposed in substantially all or only a portion of the interstitialregions. In an embodiment, the PCD table 106 may be integrally formedwith (i.e., formed from diamond powder sintered on) the cemented carbidesubstrate 102. In another embodiment, the PCD table 106 may be apre-sintered PCD table that is bonded to the cemented carbide substrate102 in an HPHT bonding process.

The PCD table 106 includes a working, upper surface 108, at least onelateral surface 110, and an optional chamfer 112 extending therebetween.However, it is noted that all or part of the at least one lateralsurface 110 and/or the chamfer 112 may also function as a workingsurface. In the illustrated embodiment, the PDC 100 has a cylindricalgeometry, and the upper surface 108 exhibits a substantially planargeometry. However, in other embodiments, the PDC 100 may exhibit anon-cylindrical geometry and/or the upper surface 108 of the PCD table106 may be nonplanar, such as convex or concave.

The PCD table 106 includes chromium carbide (e.g., Cr₃C₂ or otherstoichiometry), tantalum carbide, a tantalum carbide-tungsten carbidesolid solution, or any combination thereof. The incorporation ofchromium carbide, tantalum carbide, a tantalum carbide-tungsten carbidesolid solution, or any combination thereof may improve at least one ofthe abrasion resistance, erosion resistance, corrosion resistance, orthermal stability of the PCD table 106. For example, chromium carbidemay enhance erosion resistance and/or corrosion resistance of the PCDtable 106 to abrasive fluids, such as drilling mud. Tantalum carbide ora tantalum carbide-tungsten carbide solid solution may enhance hothardness of the PCD table 106. Chromium carbide, tantalum carbide, or atantalum carbide-tungsten carbide solid solution may each enhance thethermal stability of the PCD table 106 compared to if only themetal-solvent catalyst was present in the interstitial regions betweenthe bonded diamond grains of the PCD table 106.

The aforementioned metal carbides may be mixed with diamond particlesprior to the diamond particles being sintered to form the PCD table 106.As an alternative to or in addition to mixing the metal carbides withthe diamond particles, the metal carbides and/or one or moreconstituents of the metal carbides may be carried (e.g., dissolvedand/or swept) into the diamond particles from the cemented carbidesubstrate 102. For example, chromium from chromium carbide may bedissolved in and/or carried with the metal-solvent catalyst orinfiltrant during HPHT processing. In such a case, the metal-solventcatalyst or infiltrant having the chromium dissolved therein may beinfiltrated into the diamond particles or an at least partially leachedPCD table, and chromium carbide may precipitate during cooling. Inanother example, tantalum carbide may be swept into the diamondparticles or the at least partially leached PCD table without dissolvinginto the metal-solvent catalyst or infiltrant that infiltrates into thediamond particles. However, tantalum may also be dissolved into themetal-solvent catalyst or infiltrant during HPHT processing. Themetal-solvent catalyst or infiltrant having the tantalum dissolvedtherein may be infiltrated into the diamond particles or the at leastpartially leached PCD table, and tantalum carbide may precipitate duringcooling.

In an embodiment, the PCD table 106 includes chromium carbide present ina concentration greater than 0 wt % to about 10 wt %, greater than 0 wt% to about 7 wt %, greater than 0 wt % to about 5 wt %, greater than 0wt % to about 3 wt %, about 1 wt % to about 3 wt %, or about 1 wt % toabout 2.5 wt %. Under some sintering conditions, high concentrations ofchromium carbide (e.g., greater than about 5 wt %) may inhibit diamondgrain growth and/or bonding during sintering of the diamond particles toform the PCD table 106. The chromium carbide may be interstitiallydisposed between the bonded diamond grains of the PCD table 106.

In another embodiment, the PCD table 106 includes tantalum carbideand/or a tantalum carbide-tungsten carbide solid solution present in aconcentration greater than 0 wt % to about 15 wt %, greater than 0 wt %to about 10 wt %, greater than 0 wt % to about 7 wt %, greater than 0 wt% to about 5 wt %, about 2 wt % to about 5 wt %, greater than 0 wt % toabout 3 wt %, about 1 wt % to about 3 wt %, or about 1 wt % to about 2.5wt %. The tantalum carbide and/or a tantalum carbide-tungsten carbidesolid solution may be interstitially disposed between the bonded diamondgrains of the PCD table 106.

In yet another embodiment, the PCD table 106 includes chromium carbideand tantalum carbide and/or a tantalum carbide-tungsten carbide solidsolution in a combined total concentration greater than 0 wt % to about25 wt %, greater than 0 wt % to about 20 wt %, greater than 0 wt % toabout 15 wt %, greater than 0 wt % to about 10 wt %, or about 4 wt % toabout 8 wt %. For example, the chromium carbide may be present in thePCD table 106 in a concentration of any of the ranges previously recitedfor chromium carbide, and the tantalum carbide and/or the tantalumcarbide-tungsten carbide solid solution may be present in the PCD table106 in a concentration of any of the ranges previously recited fortantalum carbide and/or a tantalum carbide-tungsten carbide solidsolution.

As previously discussed, the chromium carbide, tantalum carbide, andtantalum carbide-tungsten carbide solid solution may be provided, atleast in part, from the cemented carbide substrate 102 during integrallyforming the PCD table 106 therewith, or infiltrating and bonding the PCDtable 106 in the form of a pre-sintered PCD table thereto. Thus, in suchembodiments, at least part of the source of chromium carbide, tantalumcarbide, and a tantalum carbide-tungsten carbide solid solution may bethe cemented carbide substrate 102. In an embodiment, the cementedcarbide substrate 102 may include chromium carbide grains in aconcentration greater than 0 wt % to about 5 wt %, greater than 0 wt %to about 3 wt %, or about 1 wt % to about 2.5 wt %. In a more detailedembodiment, the cemented carbide substrate 102 includes about 1 wt % toabout 3 wt % chromium carbide grains and about 84 wt % to about 90 wt %tungsten carbide grains cemented together with about 9 wt % to about 16wt % cobalt or other metallic cementing constituent. Maintaining theconcentration of chromium carbide below about 3 wt % may help reduce theformation of brittle double-metal carbides (e.g., eta phases of cobaltand chromium) in the cemented carbide substrate 102. The chromiumcarbide present in the cemented carbide substrate 102 may enhance theerosion and/or corrosion resistance thereof, and the chromium carbidepresent in the PCD table 106 may enhance the thermal stability, erosionresistance, and corrosion resistance thereof.

In another embodiment, the cemented carbide substrate 102 may includegreater than 0 wt % to about 25 wt % tantalum carbide grains and/or atantalum carbide-tungsten carbide solid solution grains, about 62 wt %to about 91 wt % tungsten carbide grains, and about 9 wt % to about 16wt % cobalt or other metallic cementing constituent. In a more detailedembodiment, the cemented carbide substrate 102 may include greater than1 wt % to about 4 wt % tantalum carbide grains and/or a tantalumcarbide-tungsten carbide solid solution grains, about 83 wt % to about90 wt % tungsten carbide grains, and about 9 wt % to about 16 wt %cobalt or other metallic cementing constituent. The average grain sizeof the tantalum carbide grains may be about 0.5 μm to about 3 μm, suchas about 1 μm to about 2 μm. The average grain size of the tungstencarbide grains may be about 2 μm to about 6 μm, such as about 3 μm toabout 5 μm.

In yet another embodiment, the cemented carbide substrate 102 mayinclude greater than 0 wt % to about 25 wt % tantalum carbide grainsand/or a tantalum carbide-tungsten carbide solid solution grains,greater than 0 wt % to about 3 wt % chromium carbide grains, about 59 wt% to about 91 wt % tungsten carbide grains, and about 9 wt % to about 16wt % cobalt or other metallic cementing constituent. In a more detailedembodiment, the cemented carbide substrate 102 may include greater than1 wt % to about 4 wt % tantalum carbide grains and/or a tantalumcarbide-tungsten carbide solid solution grains, greater than 1 wt % toabout 3 wt % chromium carbide grains, about 80 wt % to about 89 wt %tungsten carbide grains, and about 9 wt % to about 16 wt % cobalt orother metallic cementing constituent.

Referring to FIG. 2, when the cemented carbide substrate 102 includeschromium carbide grains, tantalum carbide grains, tantalumcarbide-tungsten carbide solid solution grains, or any combinationthereof, a depletion region 200 may be formed adjacent to the PCD table106. For example, the depletion region 200 is depleted of metal-solventcatalyst/infiltrant, chromium carbide, tantalum carbide, a tantalumcarbide-tungsten carbide solid solution, or any combination thereofrelative to a bulk 202 of the cemented carbide substrate 102. Thedepletion of one or more of such metal carbides from the depletionregion 200 is due to the cementing constituent of the cemented carbidesubstrate 102 liquefying and carrying chromium dissolved therein,tantalum dissolved therein, chromium carbide particles, tantalum carbideparticles, particles made of a tantalum carbide-tungsten carbide solidsolution, or combinations of the foregoing during HPHT fabrication ofthe PDC 100.

FIG. 3 is a cross-sectional view of an embodiment of the PDC 100 after aselected portion of the PCD table 106 has been leached to at leastpartially remove the metal-solvent catalyst or infiltrant therefrom.After leaching in a suitable acid (e.g., nitric acid, hydrochloric acid,hydrofluoric acid, or mixtures thereof) for a suitable period of time(e.g., 12-24 hours), the PCD table 106 includes a leached region 300that extends inwardly from the upper surface 108 to a selected depth D.The leached region 300 may also extend inwardly from the at least onelateral surface 110 to a selected distance d. The leached region 300 mayextend along any desired edge geometry (e.g., the chamfer 112, a radius,etc.) and/or the lateral surface 110, as desired. The PCD table 106further includes a region 304 that is relatively unaffected by theleaching process.

In some embodiments, the distance d may be about equal to the depth D.The depth D may be about 10 μm to about 1000 μm, such as about 10 μm toabout 500 μm, about 20 μm to about 150 μm, about 30 μm to about 90 μm,about 20 μm to about 75 μm, about 200 μm to about 300 μm, or about 250μm to about 500 μm. When the PCD table 106 includes chromium carbidetherein, the depths D and d of the leached region 300 may be relativelymore shallow (for a given leaching time) than when the PCD table 106includes tantalum carbide and/or a tantalum carbide-tungsten carbidesolid solution and is free of chromium carbide because the metal-solventcatalyst or infiltrant incorporated into the PCD table 106 may alloywith chromium from the chromium carbide during HPHT processing. Forexample, when the metal-solvent catalyst in the PCD table 106 is cobaltor a cobalt alloy, alloying with chromium produces a corrosion-resistantalloy that is chemically resistant to leaching.

FIG. 4 is a cross-sectional view of the PDC 100 shown in FIG. 1B afterinfiltrating a region 400 of the PCD table 106 that is remote from thecemented carbide substrate 102. The region 400 may be infiltrated withan infiltrant during integrally forming the PCD table 106 with thecemented carbide substrate 102, or prior to, during, or after bondingthe PCD table 106 to the cemented carbide substrate 102. The infiltrantmay be selected from silicon, silicon-cobalt alloys, a nonmetalliccatalyst, and combinations of the foregoing. For example, thenonmetallic catalyst may be selected from a carbonate (e.g., one or morecarbonates of Li, Na, K, Be, Mg, Ca, Sr, and Ba), a sulfate (e.g., oneor more sulfates of Be, Mg, Ca, Sr, and Ba), a hydroxide (e.g., one ormore hydroxides of Be, Mg, Ca, Sr, and Ba), elemental phosphorous and/ora derivative thereof, a chloride (e.g., one or more chlorides of Li, Na,and K), elemental sulfur and/or a derivative thereof, a polycyclicaromatic hydrocarbon (e.g., naphthalene, anthracene, pentacene,perylene, coronene, or combinations of the foregoing) and/or aderivative thereof, a chlorinated hydrocarbon and/or a derivativethereof, a semiconductor material (e.g., germanium or a germaniumalloy), and combinations of the foregoing.

One suitable carbonate catalyst is an alkali metal carbonate materialincluding a mixture of sodium carbonate, lithium carbonate, andpotassium carbonate that form a low-melting ternary eutectic system.This mixture and other suitable alkali metal carbonate materials aredisclosed in U.S. patent application Ser. No. 12/185,457, which isincorporated herein, in its entirety, by this reference. The alkalimetal carbonate material disposed in the interstitial regions of theregion 400 may be partially or substantially completely converted to oneor more corresponding alkali metal oxides by suitable heat treatmentfollowing infiltration.

Referring again to FIG. 3, in some embodiments, the leached region 300may be infiltrated with a nonmetallic catalyst, such as any of theaforementioned nonmetallic metal-carbonate catalysts. For example, afterinfiltration, the infiltrated nonmetallic metal-carbonate catalyst maybe partially or substantially completely converted to one or morecorresponding metal oxides.

FIG. 5 is a cross-sectional view of another embodiment of a PDC 500 inwhich the concentration of chromium in a PCD table thereof is minimizedto facilitate leaching while the substrate includes chromium carbide toenhance erosion and/or corrosion resistance thereof. The PDC 500includes a cemented carbide substrate 502 having an interfacial surface504 bonded to a PCD table 506. The PCD table 506 includes a working,upper surface 508, at least one lateral surface 510, and an optionalchamfer 512 extending therebetween. The PCD table 506 further includes aplurality of directly bonded-together diamond grains exhibitingdiamond-to-diamond bonding therebetween (e.g., sp³ bonding). Theplurality of directly bonded-together diamond grains defines a pluralityof interstitial regions. The PCD table 506 further includes ametal-solvent catalyst or infiltrant (e.g., iron, nickel, cobalt, oralloys thereof) that may be disposed in at least a portion of theinterstitial regions.

In an embodiment, the PCD table 506 may be integrally formed with (i.e.,formed from diamond powder sintered on) the cemented carbide substrate502. In another embodiment, the PCD table 506 may be a pre-sintered PCDtable that is bonded to the cemented carbide substrate 502 in an HPHTbonding process.

In some embodiments, the PCD table 506 may be substantially free ofchromium. In other embodiments, chromium may be present in the PCD table506 in a low concentration, such as less than about 0.25 wt %, about0.10 wt % to about 0.20 wt %, about 0.010% to about 0.050 wt %, about0.050 wt % to about 0.075 wt %, about 0.80 wt % to about 1.0 wt %, about0.60 wt % to about 0.80 wt %, or about 0.25 wt % to about 0.50 wt %. Thechromium may be present in the form of chromium carbide and/or alloyedwith the metal-solvent catalyst or infiltrant to form, for example, acobalt-chromium alloy. The concentration of the chromium may be greaterat the interface between the PCD table 506 and the cemented carbidesubstrate 502 than at the upper surface 508 of the PCD table 506.

The cemented carbide substrate 502 of the PDC 500 includes a firstcemented carbide portion 514 and a second cemented carbide portion 516.The first cemented carbide portion 514 is disposed between and bonded tothe PCD table 502 and the second cemented carbide portion 516. The firstcemented carbide portion 514 may exhibit a thickness T1 of about 0.0050inch to about 0.100 inch, such as about 0.0050 inch to about 0.030 inch,or about 0.020 inch to about 0.025 inch. The second cemented carbideportion 516 may exhibit a thickness T2 of about 0.30 inch to about 0.60inch. In other embodiments, the first cemented carbide portion 514 maybe replaced with a metallic disc, such as a disc of iron, nickel,cobalt, or alloys thereof.

After HPHT processing, the first cemented carbide portion 514 exhibits afirst concentration of chromium carbide and the second cemented carbideportion 516 exhibits a second concentration of chromium carbide that isabout 1.1 to about 1.7 times (e.g., about 1.3-1.5 times) greater thanthe first concentration. In an embodiment, the first cemented carbideportion 514 may comprise about 9 wt % to about 16 wt % cobalt, about0.50 wt % to about 1.5 wt % chromium carbide, with the balance beingsubstantially tungsten carbide. The second cemented carbide portion 516may comprise about 9 wt % to about 16 wt % cobalt, about 0.50 wt % toabout 3.0 wt % chromium carbide, with the balance being substantiallytungsten carbide. For example, the first cemented carbide portion 514may comprise about 13 wt % cobalt, about 0.70 wt % to about 0.80 wt %chromium carbide with the balance being tungsten carbide, while thesecond cemented carbide portion 516 may comprise about 13 wt % cobalt,about 1.0 wt % chromium carbide with the balance being tungsten carbide.

FIG. 6A is a cross-sectional view of yet another embodiment of a PDC 600in which the concentration of chromium in the PCD table thereof isminimized to facilitate leaching while the substrate includes chromiumcarbide to enhance erosion and/or corrosion resistance thereof. The PDC600 mainly differs from the PDC 500 shown in FIG. 5 in that a cementedcarbide substrate 602 of the PDC 600 is configured differently than thecemented carbide substrate 502. Therefore, in the interest of brevity,only the differences between the PDC 500 and the PDC 600 are describedin detail below.

The PDC 600 includes a PCD table 604 (e.g., a pre-sintered or integrallyformed PCD table) that may be substantially free of chromium or maycomprise a small concentration of chromium, such as less than about 0.25wt %, about 0.10 wt % to about 0.20 wt %, about 0.010% to about 0.050 wt%, about 0.050 wt % to about 0.075 wt %, about 0.80 wt % to about 1.0 wt%, about 0.60 wt % to about 0.80 wt %, or about 0.25 wt % to about 0.50wt %. The PCD table 604 is bonded to the cemented carbide substrate 602.The cemented carbide substrate 602 includes a first cemented carbideportion 606 having an interfacial surface 608 that is bonded to the PCDtable 604 and a second cemented carbide portion 610 bonded to the firstcemented carbide portion 606. In the illustrated embodiment, theinterfacial surface 608 is substantially planar. However, in otherembodiments, the interfacial surface 608 may exhibit a nonplanartopography. The first cemented carbide portion 606 may exhibit any ofthe compositions disclosed for the first cemented carbide portion 514and the second cemented carbide portion 610 may exhibit any of thecompositions disclosed for the second cemented carbide portion 516.

In the illustrated embodiment, the first cemented carbide portion 606may exhibit a conical geometry having a triangular cross-sectionalgeometry. The first cemented carbide portion 606 is received in a recess612 formed in the second cemented carbide portion 610. The firstcemented carbide portion 606 extends from the interfacial surface 608 toan apex 613 to define a thickness T1, which may be about 0.050 inch toabout 0.150 inch, such as about 0.075 inch to about 0.100 inch. Athickness T2 of the second cemented carbide portion 610 may be about0.30 inch to about 0.60 inch. The second cemented carbide portion 610substantially surrounds and is bonded to a lateral periphery 614 of thefirst cemented carbide portion 606 to define an interface that isobservable in, for example, a scanning electron microscope (“SEM”). Bysubstantially surrounding the lateral periphery 614 of the firstcemented carbide portion 606, the more erosion/corrosion resistant,higher chromium-content second cemented carbide portion 606 protects thelower chromium-content first cemented carbide portion 606 from abrasivedrilling conditions, such as drilling mud. However, in otherembodiments, the first cemented carbide portion 606 may exhibit anotherselected protruding geometry provided that a lateral periphery thereofis substantially surrounded by the second cemented carbide portion 610.Other complementary geometries for the first and second cemented carbideportions 606 and 610 may be employed.

As discussed above, the first cemented carbide portion 606 may exhibitother configurations besides the illustrated configuration shown in FIG.6A. For example, FIG. 6B is a cross-sectional view of a PDC 600′according to another embodiment. The PDC 600′ includes a first cementedcarbide portion 606′ comprising a conical portion 616 and a disk portion618. The disk portion 618 that extends above the recess 612 is formed inthe second cemented carbide portion 610 and is bonded to the PCD table604.

The PCD tables 506 and 604 shown in FIGS. 5-6B may be leached to aselected depth to form a leached region that extends inwardly from, forexample, the upper surface 508 shown in FIG. 5. The selected depth maybe about 10 μm to about 1000 μm, such as about 10 μm to about 500 μm,about 20 μm to about 150 μm, about 30 μm to about 90 μm, about 20 μm toabout 75 μm, about 200 μm to about 300 μm, or about 250 μm to about 500μm. Because the PCD tables 506 and 604 contain a relatively smallconcentration of chromium they are more easily leached to deplete themetal-solvent catalyst or infiltrant therefrom. If desired, the leachedregion may be infiltrated with any the infiltrant materials disclosedherein.

FIG. 7 is a cross-sectional view of an assembly 700 to be HPHT processedto form the PDC shown in FIGS. 1A and 1B according to an embodiment ofmethod. At least one layer 702 may be positioned adjacent to theinterfacial surface 104 of the cemented carbide substrate 102. The atleast one layer 702 includes a plurality of diamond particles that mayexhibit one or more selected sizes.

The one or more selected sizes may be determined, for example, bypassing the diamond particles through one or more sizing sieves or byany other method. In an embodiment, the plurality of diamond particlesmay include a relatively larger size and at least one relatively smallersize. As used herein, the phrases “relatively larger” and “relativelysmaller” refer to particle sizes determined by any suitable method,which differ by at least a factor of two (e.g., 40 μm and 20 μm). Moreparticularly, in various embodiments, the plurality of diamond particlesmay include a portion exhibiting a relatively larger size (e.g., 100 μm,90 μm, 80 μm, 70 μm, 60 μm, 50 μm, 40 μm, 30 μm, 20 μm, 15 μm, 12 μm, 10μm, 8 μm) and another portion exhibiting at least one relatively smallersize (e.g., 30 μm, 20 μm, 10 μm, 15 μm, 12 μm, 10 μm, 8 μm, 4 μm, 2 μm,1 μm, 0.5 μm, less than 0.5 μm, 0.1 μm, less than 0.1 μm). In anembodiment, the plurality of diamond particles may include a portionexhibiting a relatively larger size between about 40 μm and about 15 μmand another portion exhibiting a relatively smaller size between about12 μm and 2 μm. The plurality of diamond particles may also includethree or more different sizes (e.g., one relatively larger size and twoor more relatively smaller sizes) without limitation.

As discussed above, chromium carbide may be incorporated into the PCDtable 106 (FIGS. 1A and 1B) by mixing chromium carbide particles withthe diamond particles of the at least one layer 702 using any suitablemixing process, such as a milling process or any other suitable process.The chromium carbide particles may be present in a concentration greaterthan 0 wt % to about 15 wt %, greater than 0 wt % to about 10 wt %,greater than 0 wt % to about 7 wt %, greater than 0 wt % to about 3 wt%, about 1 wt % to about 3 wt %, or about 1 wt % to about 2.5 wt %, withthe balance being substantially the diamond particles. In anotherembodiment, tantalum carbide may be mixed with the diamond particles ina concentration greater than 0 wt % to about 10 wt %, greater than 0 wt% to about 7 wt %, greater than 0 wt % to about 3 wt %, about 1 wt % toabout 3 wt %, or about 1 wt % to about 2.5 wt %, with the balance beingsubstantially the diamond particles.

In yet another embodiment, chromium carbide and tantalum carbide may bemixed with the diamond particles. For example, the combined totalconcentration of chromium carbide and tantalum carbide may be greaterthan 0 wt % to about 25 wt %, greater than 0 wt % to about 20 wt %,greater than 0 wt % to about 15 wt %, greater than 0 wt % to about 10 wt%, or about 4 wt % to about 8 wt %. For example, the chromium carbidemay be present in a concentration of any of the ranges previouslyrecited for chromium carbide, and tantalum carbide may be present in aconcentration of any of the ranges previously recited for tantalumcarbide.

In addition to or as alternative to mixing chromium carbide and/ortantalum carbide with the diamond particles, the cemented carbidesubstrate 102 may include chromium carbide, tantalum carbide, a tantalumcarbide-tungsten carbide solid solution, or any combination thereof. Forexample, the cemented carbide substrate 102 may exhibit any of thecemented-carbide-substrate compositions, previously described above,which include chromium carbide, tantalum carbide, a tantalumcarbide-tungsten carbide solid solution, or any combination thereof. Insuch embodiments, the cemented carbide substrate 102 functions as thesource of chromium, chromium carbide, tantalum, tantalum carbide, atantalum carbide-tungsten carbide solid solution, or any combinationthereof for the chromium carbide, tantalum carbide, tantalumcarbide-tungsten carbide solid solution, or any combination thereof thatultimately occupies at least a portion of the interstitial regions ofthe PCD table 106 (FIGS. 1A and 1B).

The assembly 700 of the cemented carbide substrate 102 and the at leastone layer 702 may be placed in a pressure transmitting medium, such as arefractory metal can embedded in pyrophyllite or other pressuretransmitting medium. The pressure transmitting medium, including thecemented carbide substrate 102 and the at least one layer 702, may besubjected to an HPHT process using an ultra-high pressure press tocreate temperature and pressure conditions at which diamond is stable.The temperature of the HPHT process may be at least about 1000° C.(e.g., about 1200° C. to about 1600° C.) and the pressure of the HPHTprocess may be at least 4.0 GPa (e.g., about 5.0 GPa to about 8.0 GPa)for a time sufficient to sinter the diamond particles to form the PCDtable 106 (FIGS. 1A and 1B). For example, the pressure of the HPHTprocess may be about 5 GPa to about 7 GPa and the temperature of theHPHT process may be about 1150° C. to about 1450° C. (e.g., about 1200°C. to about 1400° C.). Upon cooling from the HPHT process, the PCD table106 becomes metallurgically bonded to the cemented carbide substrate102. In some embodiments, the PCD table 106 may be leached to enhancethe thermal stability thereof, as previously described with respect toFIG. 3 and, if desired, the leached region may be infiltrated with anyof the disclosed infiltrants.

During the HPHT process, the cementing constituent from the cementedcarbide substrate 102 may liquefy and infiltrate into the diamondparticles of the at least one layer 702. The infiltrated cementingconstituent functions as a catalyst that catalyzes formation of directlybonded-together diamond grains to sinter the diamond particles so thatthe PCD table 106 is formed. In embodiments when the cemented carbidesubstrate 102 includes chromium carbide, tantalum carbide, a tantalumcarbide-tungsten carbide solid solution, or any combination thereof theliquefied cementing constituent may carry chromium and/or tantalumdissolved therein. In another embodiment, chromium carbide particles,tantalum carbide particles, particles made from a tantalumcarbide-tungsten carbide solid solution, or any combination thereof mayalso be swept into the at least one layer 702 by the infiltratingcementing constituent to be incorporated in the PCD table 106 so-formed.

FIG. 8 is a cross-sectional view of an assembly 800 to be HPHT processedto form the PDC 100 shown in FIGS. 1A and 1B according to anotherembodiment. In the method described with respect to FIG. 8, theplurality of un-sintered diamond particles in the at least one layer 702is replaced with another type of diamond volume.

The assembly 800 comprises an at least partially leached PCD table 802including an upper surface 804 and an interfacial surface 806. The atleast partially leached PCD table 802 includes a plurality of directlybonded-together diamond grains exhibiting diamond-to-diamond bondingtherebetween (e.g., sp³ bonding). The plurality of directlybonded-together diamond grains define a plurality of interstitialregions. The interstitial regions form a network of at least partiallyinterconnected pores that enable fluid to flow from the upper surface804 to the interfacial surface 806. The at least partially leached PCDtable 802 is positioned so that the interfacial surface 806 thereof ispositioned adjacent to an interfacial surface 808 of a cemented carbidesubstrate 810. The cemented carbide substrate 810 may have a compositionthat is the same as any of the cemented carbide material used for thecemented carbide substrate 102 that includes chromium carbide, tantalumcarbide, a tantalum carbide-tungsten carbide solid solution, or anycombination thereof, as discussed hereinabove.

The at least partially leached PCD table 802 may be formed by HPHTsintering a plurality of diamond particles having any of theaforementioned diamond particle size distributions in the presence of ametal-solvent catalyst (e.g., iron, nickel, cobalt, or alloys thereof)under any of the disclosed diamond-stable HPHT conditions. For example,the metal-solvent catalyst may be infiltrated into the diamond particlesfrom a metal-solvent-catalyst disc (e.g., a cobalt disc), infiltratedfrom a cobalt-cemented tungsten carbide substrate, mixed with thediamond particles, or combinations of the foregoing. At least a portionof or substantially all of the metal-solvent catalyst may be removedfrom the sintered PCD body by leaching. For example, the metal-solventcatalyst may be at least partially removed from the sintered PCD tableby immersion in an acid, such as aqua regia, nitric acid, hydrofluoricacid, or other suitable acid, to form the at least partially leached PCDtable 802. The sintered PCD table may be immersed in the acid for about2 to about 7 days (e.g., about 3, 5, or 7 days) or for a few weeks(e.g., about 4 weeks) depending on the amount of leaching that isdesired. In an embodiment, the metal-solvent catalyst may besubstantially free of chromium as an alloying addition to improve thedegree to which the metal-solvent catalyst may be removed. In such anembodiment, because chromium is not employed in the synthesis of the atleast partially leached PCD table 802, the at least partially leachedPCD table 802 may be substantially free of chromium. It is noted that aresidual amount of the metal-solvent catalyst may still remain evenafter leaching for extended periods of time.

When the metal-solvent catalyst is infiltrated into the diamondparticles from a cemented tungsten carbide substrate including tungstencarbide grains cemented with a metal-solvent catalyst (e.g., cobalt,nickel, iron, or alloys thereof), the infiltrated metal-solvent catalystmay carry tungsten and/or tungsten carbide therewith. The at leastpartially leached PCD table 802 may include such tungsten and/ortungsten carbide therein disposed interstitially between the bondeddiamond grains. The tungsten and/or tungsten carbide may be at leastpartially removed by the selected leaching process or may be relativelyunaffected by the selected leaching process.

The assembly 800 of the at least partially leached PCD table 802 and thecemented carbide substrate 810 may be placed in a pressure transmittingmedium, such as a refractory metal can embedded in pyrophyllite or otherpressure transmitting medium. The pressure transmitting medium,including the assembly 800, may be subjected to an HPHT process using anultra-high pressure press to create temperature and pressure conditionsat which diamond is stable. The temperature of the HPHT process may beat least about 1000° C. (e.g., about 1200° C. to about 1600° C.) and thepressure of the HPHT process may be at least 4.0 GPa (e.g., about 5.0GPa to about 8.0 GPa) so that the cementing constituent in the cementedcarbide substrate 810 liquefies and infiltrates into the at leastpartially leached PCD table 802. For example, the pressure of the HPHTprocess may be about 5 GPa to about 7 GPa and the temperature of theHPHT process may be about 1150° C. to about 1450° C. (e.g., about 1200°C. to about 1400° C.). Upon cooling from the HPHT process, theinfiltrated PCD table (also referred to as a pre-sintered PCD table)represented as the PCD table 106 in FIGS. 1A and 1B becomes bonded tothe cemented carbide substrate 810.

As noted above, the cemented carbide substrate 810 includes chromiumcarbide, tantalum carbide, a solid solution of tantalum carbide,tungsten carbide, or any combination thereof. The infiltrated cementingconstituent may carry chromium and/or tantalum dissolved therein duringinfiltration. The infiltrated cementing constituent may also carrychromium carbide particles, tantalum carbide particles, particles madefrom a tantalum carbide-tungsten carbide solid solution, or anycombination thereof during infiltration. As such, the at least partiallyleached PCD table 802 infiltrated with the cementing constituentincludes chromium carbide, tantalum carbide, a tantalum carbide-tungstencarbide solid solution, or any combination thereof interstitiallydisposed between the bonded diamond grains thereof.

In an embodiment, the HPHT process conditions may be controlled so thatthe cementing constituent from the cemented carbide substrate 810 onlypartially infiltrates the at least partially leached PCD table 802 toform a first region remote from the cemented carbide substrate 810 inwhich the interstitial regions thereof remain substantially unfilled bythe cementing constituent. The distance that the cementing constituentinfiltrates into the at least partially leached PCD table 802 may becontrolled by selecting the pressure, temperature, and process timeemployed in the HPHT process. In an embodiment, the assembly 800 may besubjected to a temperature of about 1150° C. to about 1300° C. (e.g.,about 1270° C. to about 1300° C.) and a corresponding pressure that iswithin the diamond stable region, such as about 5.0 GPa. Suchtemperature and pressure conditions are lower than temperature andpressure conditions typically used to fully infiltrate the at leastpartially leached PCD table 802.

In other embodiments, the cementing constituent from the cementedcarbide substrate 810 substantially infiltrates the at least partiallyleached PCD table 802 so that substantially all of the interstitialregions are infiltrated and filled by the cementing constituentinfiltrated into the at least partially leached PCD table 802 from thecemented carbide substrate 810. If desired, after infiltrating andbonding the at least partially leached PCD table 802 to the cementedcarbide substrate 810, the cementing constituent that occupies theinterstitial regions may be at least partially removed in a subsequentleaching process using an acid (e.g., aqua regia, nitric acid,hydrofluoric acid, or other suitable acid) to form, for example, theleached region 300 shown in FIG. 3.

In another embodiment, at least one layer of silicon, a silicon-cobaltalloy, or a mixture of cobalt and silicon particles may be disposedadjacent to the upper surface 804 of the at least partially leached PCDtable 802 and may infiltrate the at least partially leached PCD table802 during the HPHT process to fill the interstitial regions of theregion 400 (FIG. 4) with an infiltrant and/or a reaction product betweenthe infiltrant and the diamond grains. As previously discussed, such aninfiltrant and/or a reaction product may include silicon, asilicon-cobalt alloy (e.g., cobalt silicide), silicon carbide, cobaltcarbide, a mixed carbide of cobalt and silicon, or combinations of theforegoing. For example, silicon carbide, cobalt carbide, and a mixedcarbide of cobalt and silicon are reaction products that may be formedby the infiltrant reacting with the diamond grains of the at leastpartially leached PCD table 802. In an embodiment, the layer includessilicon particles present in a concentration of about 50 to about 60 wt% and cobalt particles present in a concentration of about 40 to about50 wt %. In a more specific embodiment, the layer includes siliconparticles and cobalt particles present in a concentration of about equalto or near a eutectic composition of the silicon-cobalt chemical system.In some embodiments, the silicon particles and cobalt particles may beheld together by an organic binder to form a green layer of cobalt andsilicon particles. In another embodiment, the layer may comprise a thinsheet of a silicon-cobalt alloy or a green layer of silicon-cobalt alloyparticles formed by mechanical alloying having a low-melting eutectic ornear eutectic composition.

Referring again to FIGS. 4 and 8, in another embodiment, theinterstitial regions of the region 400 may be infiltrated before,during, or after the HPHT processing that bonds the at least partiallyleached PCD table 802 to the cemented carbide substrate 810 (labeled as102 in FIG. 4) with an infiltrant. For example, the infiltrant maycomprise any of the nonmetallic catalyst materials disclosed herein.

FIG. 9A is a cross-sectional view of an assembly 900 to be HPHTprocessed to form the PDC 500 shown in FIG. 5 according to yet anotherembodiment of a method. The assembly 900 may be formed by positioning arelatively thin cemented carbide portion 902 disposed between the atleast partially leached PCD table 802 and the cemented carbide substrate810. However, in other embodiments, the cemented carbide portion 902 maybe replaced with a metallic disc, such as a disc of iron, nickel,cobalt, or alloys thereof. The cemented carbide portion 902 may exhibita thickness of about 0.0050 inch to about 0.100 inch, such as about0.0050 inch to about 0.030 inch, or about 0.020 inch to about 0.025inch. The cemented carbide substrate 810 may exhibit a thickness ofabout 0.30 inch to about 0.60 inch.

The cemented carbide portion 902 may comprise cobalt-cemented tungstencarbide that is substantially free of chromium carbide. The cementedcarbide substrate 810 may include about 9 wt % to about 16 wt % cobalt,about 0.50 wt % to about 3.0 wt % chromium carbide grains, with thebalance being substantially tungsten carbide grains. For example, thecemented carbide portion 902 may include about 13 wt % cobalt, nochromium carbide with the balance being substantially tungsten carbidegrains, while the cemented carbide substrate 810 may include about 13 wt% cobalt, about 1.0 wt % chromium carbide grains with the balance beingsubstantially tungsten carbide grains.

The assembly 900 may be HPHT processed using the HPHT process conditionspreviously described. During HPHT processing of the assembly 900, thecobalt from the cemented carbide portion 902 liquefies and infiltratesinto the at least partially leached PCD table 802 to fill theinterstitial regions thereof. As a result of cobalt being depleted fromthe cemented carbide portion 902, a molten cobalt-chromium alloy fromthe cemented carbide substrate 810 infiltrates into the depletedinterstitial regions of the cemented carbide portion 902. Duringcooling, chromium carbide precipitates from the infiltratedcobalt-chromium alloy to increase the chromium carbide content of thecemented carbide portion 902, which is represented as the first cementedcarbide portion 514 in FIG. 5.

In an embodiment, the volume of cobalt or other cementing constituent inthe cemented carbide portion 902 may be chosen to infiltrate and fillsubstantially all or a part of the interstitial regions of the at leastpartially leached PCD table 802 during HPHT processing. During HPHTprocessing of the assembly 900, infiltration of the cementingconstituent carrying chromium and/or chromium carbide from the cementedcarbide substrate 810 is largely blocked. However, in some embodiments,there may be some chromium carbide present at the interface between theinfiltrated PCD table and the cemented carbide portion 902, in a thinregion of the infiltrated PCD table adjacent to the interface, or arelatively small amount distributed through the infiltrated PCD tabledue to infiltration of chromium. Because chromium was not significantlyinfiltrated into the at least partially leached PCD table 802 with thecementing constituent of the cemented carbide substrate 810, theinfiltrated PCD table may be easily leached to a selected depth.

FIG. 9B is a cross-sectional view of an assembly 900′ to be HPHTprocessed to form the PDC 600 shown in FIG. 6A according to yet anotherembodiment of a method. The assembly 900′ may be formed by disposing afirst cemented carbide portion 902′ into a recess 904 formed in a secondcemented carbide portion 810′, and disposing the at least partiallyleached PCD table 802 adjacent to the first cemented carbide portion902′. The first cemented carbide portion 902′ may exhibit a conicalgeometry or other selected geometry that may be received by thecorrespondingly configured recess 904 formed in the second cementedcarbide portion 610. The first cemented carbide portion 902′ may exhibitany of the compositions disclosed for the first cemented carbide portion902 and the second cemented carbide portion 810′ may exhibit any thecompositions disclosed for the second cemented carbide portion 810.

The assembly 900′ may be HPHT processed using the HPHT processconditions previously described to form the PDC 600 shown in FIG. 6A.The first cemented carbide portion 902′ serves the same function as thecemented carbide portion 902 (FIG. 9A), which is to provide asubstantially chromium-free infiltrant of, for example, cobalt that isinfiltrated into the at least partially leached PCD table 802 duringHPHT processing. However, the less erosion-resistant first cementedcarbide portion 902′ is protected from abrasive drilling conditions(e.g., drilling mud) since a lateral periphery thereof beingsubstantially surrounded by the second cemented carbide portion 810′.Even after HPHT processing an interface 904 between the first cementedcarbide portion 902′ and the second cemented carbide portion 810′ may beapparent from microstructural examination. The PDC 600′ shown in FIG. 6Bmay be formed in the same or similar manner to the PDC 600 by modifyingthe geometry of the first cemented carbide portion 902′.

In another embodiment, the at least partially leached PCD table 802shown in FIGS. 9A and 9B may be replaced with another type of diamondvolume such as a mass of un-sintered diamond particles (e.g., diamondpowder) to be sintered. During HPHT processing, a cementing constituentfrom the cemented carbide portion 902 or first cemented carbide portion902′ (e.g., cobalt from a cobalt-cemented tungsten carbide substrate)may infiltrate into the diamond particles to catalyze formation of a PCDtable that is integrally formed with the cemented carbide portion 902 orfirst cemented carbide portion 902′, while infiltration of a cementingconstituent carrying chromium and/or chromium carbide from the cementedcarbide substrate 810 or the second cemented carbide portion 810′ islargely blocked. The cementing constituent infiltrated from the cementedcarbide portion 902 or first cemented carbide portion 902′ may occupythe interstitial regions between the bonded diamond grains of the PCDtable. Upon cooling from the HPHT process, the PCD table may be bondedto the cemented carbide portion 902 or first cemented carbide portion902′. In an embodiment, the volume of cobalt or other cementingconstituent in the cemented carbide portion 902 may be chosen toinfiltrate and fill substantially all or a part of the interstitialregions of the diamond powder during HPHT processing. However, in someembodiments, there may be some chromium carbide present at the interfacebetween the PCD table so formed and the underlying substrate, in a thinregion of the PCD table so formed adjacent to the interface, or arelatively small amount distributed through the PCD table so formed dueto infiltration of chromium. Because chromium was not significantlyinfiltrated into PCD table with the metal-solvent catalyst of thecemented carbide substrate 810 or the second cemented carbide portion810′, the infiltrated PCD table may be easily leached to a selecteddepth.

FIG. 10A is an isometric view and FIG. 10B is a top elevation view of anembodiment of a rotary drill bit 1000. The rotary drill bit 1000includes at least one PDC configured according to any of the previouslydescribed PDC embodiments, such as the PDC 100 of FIGS. 1A and 1B. Therotary drill bit 1000 comprises a bit body 1002 that includes radially-and longitudinally-extending blades 1004 having leading faces 1006, anda threaded pin connection 1008 for connecting the bit body 1002 to adrilling string. The bit body 1002 defines a leading end structure fordrilling into a subterranean formation by rotation about a longitudinalaxis 1010 and application of weight-on-bit. At least one PDC, configuredaccording to any of the previously described PDC embodiments, may beaffixed to the bit body 1002. With reference to FIG. 10B, a plurality ofPDCs 1012 are secured to the blades 1004 of the bit body 1002 (FIG.10A). For example, each PDC 1012 may include a PCD table 1014 bonded toa substrate 1016. More generally, the PDCs 1012 may comprise any PDCdisclosed herein, without limitation. In addition, if desired, in someembodiments, a number of the PDCs 1012 may be conventional inconstruction. Also, circumferentially adjacent blades 1004 defineso-called junk slots 1020 therebetween. Additionally, the rotary drillbit 1000 includes a plurality of nozzle cavities 1018 for communicatingdrilling fluid from the interior of the rotary drill bit 1000 to thePDCs 1012.

FIGS. 10A and 10B merely depict one embodiment of a rotary drill bitthat employs at least one PDC fabricated and structured in accordancewith the disclosed embodiments, without limitation. The rotary drill bit1000 is used to represent any number of earth-boring tools or drillingtools, including, for example, core bits, roller-cone bits, fixed-cutterbits, eccentric bits, bicenter bits, reamers, reamer wings, or any otherdownhole tool including superabrasive compacts, without limitation.

The PDCs disclosed herein (e.g., the PDC 100 shown in FIGS. 1A and 1B)may also be utilized in applications other than cutting technology. Forexample, the disclosed PDC embodiments may be used in wire dies,bearings, artificial joints, inserts, cutting elements, and heat sinks.Thus, any of the PDCs disclosed herein may be employed in an article ofmanufacture including at least one superabrasive element or compact.

Thus, the embodiments of PDCs disclosed herein may be used on anyapparatus or structure in which at least one conventional PDC istypically used. In one embodiment, a rotor and a stator, assembled toform a thrust-bearing apparatus, may each include one or more PDCs(e.g., the PDC 100 shown in FIGS. 1A and 1B) configured according to anyof the embodiments disclosed herein and may be operably assembled to adownhole drilling assembly. U.S. Pat. Nos. 4,410,054; 4,560,014;5,364,192; 5,368,398; and 5,480,233, the disclosure of each of which isincorporated herein, in its entirety, by this reference, disclosesubterranean drilling systems within which bearing apparatuses utilizingsuperabrasive compacts disclosed herein may be incorporated. Theembodiments of PDCs disclosed herein may also form all or part of heatsinks, wire dies, bearing elements, cutting elements, cutting inserts(e.g., on a roller-cone-type drill bit), machining inserts, or any otherarticle of manufacture as known in the art. Other examples of articlesof manufacture that may use any of the PDCs disclosed herein aredisclosed in U.S. Pat. Nos. 4,811,801; 4,268,276; 4,468,138; 4,738,322;4,913,247; 5,016,718; 5,092,687; 5,120,327; 5,135,061; 5,154,245;5,460,233; 5,544,713; 5,180,022; and 6,793,681, the disclosure of eachof which is incorporated herein, in its entirety, by this reference.

The following working examples provide further detail in connection withthe specific embodiments described above. Comparative working examples1, 2, 4, 5, 7, 10-12, 19, 20 are compared to working examples 3, 6, 8,9, 13-18, 21 fabricated according to specific embodiments of theinvention.

Comparative Working Example 1

One PDC was formed according to the following process. A mass of diamondparticles having an average particle size of about 19 μm was disposed ona cobalt-cemented tungsten carbide substrate. The mass of diamondparticles and the cobalt-cemented tungsten carbide substrate were HPHTprocessed in a high-pressure cubic press at a temperature of about 1400°C. and a pressure of about 5 GPa to about 7 GPa to form a PDC comprisinga PCD table integrally formed and bonded to the cobalt-cemented tungstencarbide substrate. The PCD table exhibited a thickness of about 0.07155inch and a chamfer exhibiting a length of 0.0118 inch at an angle ofabout 45° with respect to a top surface of the PCD table was machinedtherein.

The abrasion resistance of the conventional PDC of comparative workingexample 1 was evaluated by measuring the volume of PDC removed versusthe volume of Barre granite workpiece removed, while the workpiece wascooled with water. The test parameters were a depth of cut for the PDCof about 0.254 mm, a back rake angle for the PDC of about 20 degrees, anin-feed for the PDC of about 6.35 mm/rev, and a rotary speed of theworkpiece to be cut of about 101 RPM. FIG. 11 shows the abrasionresistance test results for the PDC of comparative working example 1.

The thermal stability of the PCD table of the conventional PDC ofcomparative working example 1 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, in a vertical turret lathe test. The distance cut isconsidered representative of the thermal stability of the PCD table. Thetest parameters were a depth of cut for the PDC of about 1.27 mm, a backrake angle for the PDC of about 20 degrees, an in-feed for the PDC ofabout 1.524 mm/rev, and a cutting speed of the workpiece to be cut ofabout 1.78 msec. The conventional PDC of comparative working example 1was able to cut a distance of about 1893 linear feet in the workpieceprior to failure.

Comparative Working Example 2

One PDC was formed according to the process described for comparativeworking example 1. The PCD table exhibited a thickness of about 0.089inch and a chamfer exhibiting a length of 0.0118 inch at an angle ofabout 45° with respect to a top surface of the PCD table was machinedtherein. The PCD table was leached to a depth of about 92 μm.

The abrasion resistance of the conventional PDC of working example 2 wasevaluated by measuring the volume of PDC removed versus the volume ofBarre granite workpiece removed, while the workpiece was cooled withwater, using the same workpiece and the same test parameters ascomparative working example 1. As shown in FIG. 11, the abrasionresistance of the PDC of working example 2 was greater than that of thePDC of comparative working example 1. The thermal stability of theconventional PCD table of working example 2 was also evaluated bymeasuring the distance cut in a Barre granite workpiece prior tofailure, without using coolant, using the same workpiece and the sametest parameters as comparative working example 1. The PCD table of thePDC of working example 2 was able to cut a distance of about 2511 linearfeet in the workpiece prior to failure.

Working Example 3

One PDC was formed according to the following process. A mass of diamondparticles having an average particle size of about 19 μm was disposed ona cemented carbide substrate. The cemented carbide substrate wascomposed of about 13 wt % cobalt as a cementing constituent, about 2 wt% tantalum carbide, and about 85 wt % tungsten carbide. The mass ofdiamond particles and the cemented carbide substrate were HPHT processedin a high-pressure cubic press at a temperature of about 1400° C. and apressure of about 5 GPa to about 7 GPa to form a PDC comprising a PCDtable integrally formed and bonded to the cemented carbide substrate.The PCD table exhibited a thickness of about 0.0686 inch and a chamferexhibiting a length of 0.0125 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein.

The abrasion resistance of the PDC of working example 3 was evaluated bymeasuring the volume of PDC removed versus the volume of Barre graniteworkpiece removed, while the workpiece was cooled with water, using thesame workpiece and the same test parameters as comparative workingexample 1. As shown in FIG. 11, the abrasion resistance of the PDC ofworking example 3 was greater than that of the PDCs of comparativeworking examples 1 and 2. The thermal stability of the PCD table ofworking example 3 was also evaluated by measuring the distance cut in aBarre granite workpiece prior to failure, without using coolant, usingthe same workpiece and the same test parameters as comparative workingexample 1. The PCD table of the PDC of working example 3 was able to cuta distance of about 1059 linear feet in the workpiece prior to failure.

Comparative Working Example 4

One PDC was formed according to the process described for comparativeworking example 1. The PCD table exhibited a thickness of about 0.067inch and a chamfer exhibiting a length of 0.0117 inch at an angle ofabout 45° with respect to a top surface of the PCD table was machinedtherein.

The abrasion resistance of the conventional PDC of comparative workingexample 4 was evaluated by measuring the volume of PDC removed versusthe volume of Barre granite workpiece removed, while the workpiece wascooled with water. The test parameters were the same as used forcomparative working example 1. FIG. 12 shows the abrasion resistancetest results for the PDC of comparative working example 4.

The thermal stability of the conventional PCD table of the conventionalPDC of comparative working example 4 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, in a vertical turret lathe test. The test parameters werethe same as used for comparative working example 1. The conventional PDCof comparative working example 4 was able to cut a distance of about2511 linear feet in the workpiece prior to failure.

Comparative Working Example 5

One PDC was formed according to the process described for comparativeworking example 1. The PCD table exhibited a thickness of about 0.089inch and a chamfer exhibiting a length of 0.0118 inch at an angle ofabout 45° with respect to a top surface of the PCD table was machinedtherein. The PCD table was leached to a depth of about 92 μm.

The abrasion resistance of the conventional PDC of comparative workingexample 5 was evaluated by measuring the volume of PDC removed versusthe volume of Barre granite workpiece removed, while the workpiece wascooled with water, using the same workpiece as comparative workingexample 4. The test parameters were the same as used for comparativeworking example 1. FIG. 12 shows the abrasion resistance test resultsfor the PDC of comparative working example 5.

The thermal stability of the PCD table of the conventional PDC ofcomparative working example 5 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, in a vertical turret lathe test using the same workpieceas comparative working example 4. The test parameters were the same asused for comparative working example 1. The conventional PDC ofcomparative working example 5 was able to cut a distance of about 2511linear feet in the workpiece prior to failure.

Working Example 6

One PDC was formed according to the following process. A mass of diamondparticles having an average particle size of about 19 μm was disposed ona cemented carbide substrate. The cemented carbide substrate wascomposed of about 13 wt % cobalt as a cementing constituent, about 1 wt% chromium carbide, and about 86 wt % tungsten carbide. The mass ofdiamond particles and the cemented carbide substrate were HPHT processedin a high-pressure cubic press at a temperature of about 1400° C. and apressure of about 5 GPa to about 7 GPa to form a PDC comprising a PCDtable integrally formed and bonded to the cemented carbide substrate.The PCD table exhibited a thickness of about 0.069 inch and a chamferexhibiting a length of 0.012 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein.

The abrasion resistance of the PDC of working example 6 was evaluated bymeasuring the volume of PDC removed versus the volume of Barre graniteworkpiece removed, while the workpiece was cooled with water, using thesame workpiece and the same test parameters as comparative workingexample 4. As shown in FIG. 12, the abrasion resistance of the PDC ofworking example 6 was greater than that of the PDCs of comparativeworking examples 4 and 5. The thermal stability of the PCD table ofworking example 6 was also evaluated by measuring the distance cut in aBarre granite workpiece prior to failure, without using coolant, usingthe same workpiece and the same test parameters as comparative workingexample 4. The PCD table of the PDC of working example 3 was able to cuta distance of about 812 linear feet in the workpiece prior to failure.

Comparative Working Example 7

One PDC was formed according to the process described for comparativeworking example 1. The PCD table exhibited a thickness of about 0.0866inch and a chamfer exhibiting a length of 0.0133 inch at an angle ofabout 45° with respect to a top surface of the PCD table was machinedtherein. The PCD table was leached to a depth of about 99 μm.

The abrasion resistance of the PDC of comparative working example 7 wasevaluated by measuring the volume of PDC removed versus the volume ofBarre granite workpiece removed, while the workpiece was cooled withwater. The test parameters were the same as used for comparative workingexample 1. FIG. 13 shows the abrasion resistance test results for thePDC of comparative working example 7.

The thermal stability of the PCD table of the conventional PDC ofcomparative working example 7 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, in a vertical turret lathe test. The test parameters werethe same as used for comparative working example 1. The conventional PDCof comparative working example 7 was able to cut a distance of about1568 linear feet in the workpiece prior to failure.

Working Example 8

One PDC was formed according to the process described for workingexample 3 with a tantalum-carbide-containing cemented carbide substrate.The PCD table exhibited a thickness of about 0.0775 inch and a chamferexhibiting a length of 0.0115 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein. The PCD tablewas leached to a depth of between about 39 μm to about 67 μm as measuredin an SEM.

The abrasion resistance of the PDC of working example 8 was evaluated bymeasuring the volume of PDC removed versus the volume of Barre graniteworkpiece removed, while the workpiece was cooled with water, using thesame workpiece and the same test parameters as comparative workingexample 7. As shown in FIG. 13, the abrasion resistance of the PDC ofworking example 8 was greater than that of comparative working example7. The thermal stability of the PCD table of working example 8 was alsoevaluated by measuring the distance cut in a Barre granite workpieceprior to failure, without using coolant, using the same workpiece andthe same test parameters as comparative working example 7. The PCD tableof the PDC of working example 8 was able to cut a distance of about 2344linear feet in the workpiece prior to failure, which is greater than thedistance cut by comparative working example 7. Thus, despite arelatively shallow leaching compared to comparative working example 7,the PCD table of the PDC of working example 8 was able to outperform thePCD table of comparative working example 7 in both abrasion andthermal-stability tests.

Working Example 9

One PDC was formed according to the process described for workingexample 6 with chromium-carbide-containing cemented carbide substrate.The PCD table exhibited a thickness of about 0.0750 inch and a chamferexhibiting a length of 0.0108 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein. The PCD tablewas leached to a depth of between about 15 μm to about 37 μm as measuredin a SEM.

The abrasion resistance of the PDC of working example 9 was evaluated bymeasuring the volume of PDC removed versus the volume of Barre graniteworkpiece removed, while the workpiece was cooled with water, using thesame workpiece and the same test parameters as comparative workingexample 7. As shown in FIG. 13, the abrasion resistance of the PDC ofworking example 9 was greater than that of comparative working example7, but less than that of working example 8. The thermal stability of thePCD table of working example 9 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, using the same workpiece and the same test parameters ascomparative working example 7. The PCD table of the PDC of workingexample 9 was able to cut a distance of about 2414 linear feet in theworkpiece prior to failure, which is greater than the distance cut bycomparative working example 7 and working example 8. Thus, despite arelatively lower leaching depth compared to comparative working example7, the PCD table of the PDC of working example 9 was able to outperformthe PCD table of comparative working example 7 in both abrasion andthermal-stability tests.

Comparative Working Example 10

First and second PDCs were formed according to the process described forcomparative working example 1. The PCD table of the first PDC exhibiteda thickness of about 0.065 inch and a chamfer exhibiting a length of0.0112 inch at an angle of about 45° with respect to a top surface ofthe PCD table was machined therein. The PCD table of the second PDCexhibited a thickness of about 0.063 inch and a chamfer exhibiting alength of 0.0111 inch at an angle of about 45° with respect to the topsurface of the PCD table was machined therein.

The abrasion resistance of the conventional first PDC of comparativeworking example 10 was evaluated by measuring the volume of PDC removedversus the volume of Barre granite workpiece removed, while theworkpiece was cooled with water. The test parameters were the same asused for comparative working example 1. FIG. 14 shows the abrasionresistance test results for the conventional first PDC of comparativeworking example 10.

The thermal stability of the PCD table of the conventional second PDC ofcomparative working example 10 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, in a vertical turret lathe test. The test parameters werethe same as used for comparative working example 1. The PCD table of theconventional second PDC of comparative working example 10 was able tocut a distance of about 1769 linear feet in the workpiece prior tofailure.

Comparative Working Example 11

A PDC was formed according to the process described for comparativeworking example 1. The PCD table exhibited a thickness of about 0.090inch and a chamfer exhibiting a length of 0.0126 inch at an angle ofabout 45° with respect to a top surface of the PCD table was machinedtherein.

The thermal stability of the PCD table of the conventional PDC ofcomparative working example 11 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, in a vertical turret lathe test using the same workpieceand test parameters as comparative working example 10. The conventionalPDC of comparative working example 11 was able to cut a distance ofabout 745 linear feet in the workpiece prior to failure.

Comparative Working Example 12

A PDC was formed according to the process described for comparativeworking example 1. The PCD table exhibited a thickness of about 0.077inch and a chamfer exhibiting a length of 0.0101 inch at an angle ofabout 45° with respect to a top surface of the PCD table was machinedtherein. The PCD table was leached to a depth of about 89 μm.

The thermal stability of the PCD table of the conventional PDC ofcomparative working example 12 was also evaluated by measuring thedistance cut in a Barre granite workpiece prior to failure, withoutusing coolant, in a vertical turret lathe test using the same workpieceand test parameters as comparative working example 10. The conventionalPDC of comparative working example 12 was able to cut a distance ofabout 2354 linear feet in the workpiece prior to failure.

Working Example 13

First and second PDCs were formed according to the following process. Amixture of 96 wt % diamond particles having an average particle size ofabout 19 μm and 4 wt % tantalum carbide was formed. The mixture wasdisposed on a cobalt-cemented tungsten carbide substrate having acomposition of 13 wt % cobalt and 87 wt % tungsten carbide. The mixtureand the cobalt-cemented tungsten carbide substrate were HPHT processedin a high-pressure cubic press at a temperature of about 1400° C. and apressure of about 5 GPa to about 7 GPa to form a PDC comprising a PCDtable integrally formed and bonded to the cobalt-cemented tungstencarbide substrate. The PCD table of the first PDC exhibited a thicknessof about 0.077 inch and a chamfer exhibiting a length of 0.0109 inch atan angle of about 45° with respect to a top surface of the PCD table wasmachined therein. The PCD table of the second PDC exhibited a thicknessof about 0.065 inch and a chamfer exhibiting a length of 0.0128 inch atan angle of about 45° with respect to a top surface of the PCD table wasmachined therein.

The abrasion resistance of the first PDC of working example 13 wasevaluated by measuring the volume of PDC removed versus the volume ofBarre granite workpiece removed, while the workpiece was cooled withwater, using the same workpiece and the same test parameters ascomparative working example 10. As shown in FIG. 14, the abrasionresistance of the first PDC of working example 13 was approximately thesame as that of comparative working example 10. The thermal stability ofthe PCD table of the second PDC of working example 13 was also evaluatedby measuring the distance cut in a Barre granite workpiece prior tofailure, without using coolant, using the same workpiece and testparameters as comparative working example 10. The PCD table of thesecond PDC of working example 13 was able to cut a distance of about3056 linear feet in the workpiece prior to failure, which issignificantly greater than the distance cut by comparative workingexamples 10-12. Thus, despite not being leached, the PCD table of thesecond PDC of working example 13 was more thermally stable than that ofthe PCD table of comparative working example 12.

Working Example 14

First and second PDCs were formed according to the process described forworking example 13. The PCD table of the first PDC exhibited a thicknessof about 0.083 inch, a chamfer exhibiting a length of 0.0138 inch at anangle of about 45° with respect to a top surface of the PCD table wasmachined therein, and the PCD table was leached. The PCD table of thesecond PDC exhibited a thickness of about 0.076 inch, a chamferexhibiting a length of 0.0131 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein, and the PCDtable was leached.

The abrasion resistance of the PDC of working example 14 was evaluatedby measuring the volume of PDC removed versus the volume of Barregranite workpiece removed, while the workpiece was cooled with water,using the same workpiece and the same test parameters as comparativeworking example 10. As shown in FIG. 14, the abrasion resistance of thefirst PDC of working example 14 was significantly greater than that ofcomparative working example 10 and working example 13. The thermalstability of the PCD table of the second PDC of working example 14 wasalso evaluated by measuring the distance cut in a Barre graniteworkpiece prior to failure, without using coolant, using the sameworkpiece and test parameters as comparative working example 10. The PCDtable of the second PDC of working example 14 was able to cut a distanceof about 3269 linear feet in the workpiece prior to failure, which issignificantly greater than the distance cut by comparative workingexamples 10-12.

Working Example 15

First and second PDCs were formed according to the following process. Amixture of 96 wt % diamond particles having an average particle size ofabout 19 μm and 4 wt % chromium carbide was formed. The mixture wasdisposed on a cobalt-cemented tungsten carbide substrate having acomposition of 13 wt % cobalt and 87 wt % tungsten carbide. The mixtureand the cobalt-cemented tungsten carbide substrate were HPHT processedin a high-pressure cubic press at a temperature of about 1400° C. and apressure of about 5 GPa to about 7 GPa to form a PDC comprising a PCDtable integrally formed and bonded to the cobalt-cemented tungstencarbide substrate. The PCD table of the first PDC exhibited a thicknessof about 0.076 inch and a chamfer exhibiting a length of 0.014 inch atan angle of about 45° with respect to a top surface of the PCD table wasmachined therein. The PCD table of the second PDC exhibited a thicknessof about 0.075 inch and a chamfer exhibiting a length of 0.0123 inch atan angle of about 45° with respect to a top surface of the PCD table wasmachined therein.

The abrasion resistance of the PDC of working example 15 was evaluatedby measuring the volume of PDC removed versus the volume of Barregranite workpiece removed, while the workpiece was cooled with water,using the same workpiece and the same test parameters as comparativeworking example 10. As shown in FIG. 14, the abrasion resistance of thefirst PDC of working example 15 was significantly greater than that ofcomparative working example 10 and working example 13. The thermalstability of the PCD table of the second PDC of working example 14 wasalso evaluated by measuring the distance cut in a Barre graniteworkpiece prior to failure, without using coolant, using the sameworkpiece and the same test parameters as comparative working example10. The PCD table of the second PDC of working example 15 was able tocut a distance of about 1154 linear feet in the workpiece prior tofailure, which is greater than the distance cut by comparative workingexample 11.

Working Example 16

First and second PDCs were formed according to the process described forworking example 15. The PCD table of the first PDC exhibited a thicknessof about 0.078 inch, a chamfer exhibiting a length of 0.014 inch at anangle of about 45° with respect to a top surface of the PCD table wasmachined therein, and the PCD table was leached. The PCD table of thesecond PDC exhibited a thickness of about 0.074 inch, a chamferexhibiting a length of 0.013 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein, and the PCDtable was leached.

The abrasion resistance of the first PDC of working example 16 wasevaluated by measuring the volume of PDC removed versus the volume ofBarre granite workpiece removed, while the workpiece was cooled withwater, using the same workpiece and the same test parameters ascomparative working example 10. As shown in FIG. 14, the abrasionresistance of the first PDC of working example 16 was significantlygreater than that of comparative working example 10 and working example13. The thermal stability of the PCD table of the second PDC of workingexample 16 was also evaluated by measuring the distance cut in a Barregranite workpiece prior to failure, without using coolant, using thesame workpiece and the same test parameters as comparative workingexample 10. The PCD table of the second PDC of working example 16 wasable to cut a distance of about 2501 linear feet in the workpiece priorto failure, which is greater than the distance cut by comparativeworking examples 10-12, and working example 15.

Working Example 17

First and second PDCs were formed according to the following process. Amixture of 84 wt % diamond particles having an average particle size ofabout 19 μm, 4 wt % chromium carbide, and 12 wt % tantalum carbide wasformed. The mixture was disposed on a cobalt-cemented tungsten carbidesubstrate having a composition of 13 wt % cobalt and 87 wt % tungstencarbide. The mixture and the cobalt-cemented tungsten carbide substratewere HPHT processed in a high-pressure cubic press at a temperature ofabout 1400° C. and a pressure of about 5 GPa to about 7 GPa to form aPDC comprising a PCD table integrally formed and bonded to thecobalt-cemented tungsten carbide substrate. The PCD table of the firstPDC exhibited a thickness of about 0.074 inch and a chamfer exhibiting alength of 0.0121 inch at an angle of about 45° with respect to a topsurface of the PCD table was machined therein. The PCD table of thesecond PDC exhibited a thickness of about 0.066 inch and a chamferexhibiting a length of 0.0126 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein.

The abrasion resistance of the first PDC of working example 17 wasevaluated by measuring the volume of PDC removed versus the volume ofBarre granite workpiece removed, while the workpiece was cooled withwater, using the same workpiece and the same test parameters ascomparative working example 10. As shown in FIG. 14, the abrasionresistance of the first PDC of working example 17 was greater than thatof comparative working examples 10 and working examples 13, 16, and 18.The thermal stability of the PCD table of the second PDC of workingexample 17 was also evaluated by measuring the distance cut in a Barregranite workpiece prior to failure, without using coolant, using thesame workpiece and the same test parameters as comparative workingexample 10. The PCD table of the second PDC of working example 17 wasable to cut a distance of about 1889 linear feet in the workpiece priorto failure, which is greater than the distance cut by comparativeworking examples 10-11, and working example 15.

Working Example 18

First and second PDCs were formed according to the process described forworking example 17. The PCD table of the first PDC exhibited a thicknessof about 0.063 inch, a chamfer exhibiting a length of 0.0133 inch at anangle of about 45° with respect to a top surface of the PCD table wasmachined therein, and the PCD table was leached. The PCD table of thesecond PDC exhibited a thickness of about 0.062 inch, a chamferexhibiting a length of 0.0126 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein, and the PCDtable was leached.

The abrasion resistance of the PDC of working example 18 was evaluatedby measuring the volume of the PDC removed versus the volume of Barregranite workpiece removed, while the workpiece was cooled with water,using the same workpiece and the same test parameters as comparativeworking example 10. As shown in FIG. 14, the abrasion resistance of thefirst PDC of working example 18 was the least wear resistant of all ofthe comparative working examples and working examples. It is currentlybelieved by the inventors that some of the chromium carbide and tantalumcarbide particles were removed by the leaching process, and thiscontributed to the low abrasion resistance of the first PDC. The thermalstability of the PCD table of the second PDC of working example 18 wasalso evaluated by measuring the distance cut in a Barre graniteworkpiece prior to failure, without using coolant, using the sameworkpiece and the same test parameters as comparative working example10. The PCD table of the second PDC of working example 18 was able tocut a distance of about 1879 linear feet in the workpiece prior tofailure, which is greater than the distance cut by comparative workingexamples 10-11, and working example 15.

Comparative Working Example 19

First and second PDCs were formed according to the process described forcomparative working example 1. The first PDC had a PCD table thatexhibited a thickness of about 0.0907 inch and a chamfer exhibiting alength of 0.0138 inch at an angle of about 45° with respect to a topsurface of the PCD table was machined therein. The second PDC had a PCDtable that exhibited a thickness of about 0.0921 inch and a chamferexhibiting a length of 0.0124 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein.

The abrasion resistance of the first PDC of comparative working example19 was evaluated by measuring the volume of PDC removed versus thevolume of Barre granite workpiece removed, while the workpiece wascooled with water, using the same test parameters as comparative workingexample 1. FIG. 15 shows the abrasion resistance test results for thefirst PDC of comparative working example 19. The thermal stability ofthe PCD table the second PDC of comparative working example 19 was alsoevaluated by measuring the distance cut in a Barre granite workpieceprior to failure, without using coolant, using the same test parametersas comparative working example 1. The PCD table of the second PDC ofcomparative working example 19 was able to cut a distance of about 1600linear feet in the workpiece prior to failure.

Comparative Working Example 20

First and second PDCs were formed according to the process described forcomparative working example 1. The first PDC had a PCD table thatexhibited a thickness of about 0.0809 inch and a chamfer exhibiting alength of 0.0123 inch at an angle of about 45° with respect to a topsurface of the PCD table was machined therein. The second PDC had a PCDtable that exhibited a thickness of about 0.0923 inch and a chamferexhibiting a length of 0.0115 inch at an angle of about 45° with respectto a top surface of the PCD table was machined therein. The PCD tablesof the first and second PDCs were leached to a depth of about 71 μm.

The abrasion resistance of the first PDC of comparative working example20 was evaluated by measuring the volume of PDC removed versus thevolume of Barre granite workpiece removed, while the workpiece wascooled with water, using the same workpiece and same test parameters ascomparative working example 19. FIG. 15 shows the abrasion resistancetest results for the first PDC of comparative working example 20. Thethermal stability of the PCD table of the second PDC of comparativeworking example 20 was also evaluated by measuring the distance cut in aBarre granite workpiece prior to failure, without using coolant, usingthe same workpiece and same test parameters as comparative workingexample 19. The PCD table of the second PDC of comparative workingexample 20 was able to cut a distance of about 3000 linear feet in theworkpiece prior to failure.

Working Example 21

Three PDCs were formed according to the following process. A PCD tablewas formed by HPHT sintering, in the presence of cobalt, diamondparticles having an average grain size of about 19 μm. The PCD tableincluded bonded diamond grains, with cobalt disposed within interstitialregions between the bonded diamond grains. The PCD table was leachedwith an acid for a time sufficient to remove substantially all of thecobalt from the interstitial regions to form an at least partiallyleached PCD table. An assembly was formed by disposing a cobalt-cementedtungsten carbide disk between a cemented carbide substrate and the atleast partially leached PCD table. The cobalt-cemented tungsten carbidedisk had a composition of about 13 wt % cobalt and 87 wt % tungstencarbide (no chromium carbide) and a thickness of about 0.020 inch. Thecemented carbide substrate had a composition of about 13 wt % cobalt,about 1 wt % chromium carbide, and about 86 wt % tungsten carbide. Theassembly was HPHT processed in a high-pressure cubic press at atemperature of about 1400° C. and a pressure of about 5 GPa to about 7GPa to form a PDC comprising an infiltrated PCD table bonded to asubstrate. The substrate was formed from the precursor cobalt-cementedtungsten carbide disk and the precursor cemented carbide substrate.

Scanning electron microscopy showed that the at least partially leachedPCD table of each PDC was well infiltrated with cobalt. Energydispersive spectroscopy performed in the SEM showed that the PCD tableshad a relatively small amount of chromium infiltrated therein from thecemented carbide substrate compared to the underlying substrate. The topsurface of the infiltrated PCD table remote from the substrate had about0.13 wt % chromium and the interface between the infiltrated PCD tableand the substrate had about 0.16 wt %.

The abrasion resistance of each of the three PDCs of working example 21was evaluated by measuring the volume of PDC removed versus the volumeof Barre granite workpiece removed, while the workpiece was cooled withwater, using the same workpiece and same test parameters as comparativeworking example 19. FIG. 15 shows the abrasion resistance test resultsfor the three PDCs of working example 21, which are labeled WorkingExample 21a, 21b, and 21c. The PDCs of working example 21 exhibited anabrasion resistance that was greater than comparative working examples19 and 20 as represented by the lower volume of the PDC removed for agiven volume of the workpiece removed.

The thermal stability of the PCD tables of working examples 21a, 21b,and 21c were also evaluated by measuring the distance cut in a Barregranite workpiece prior to failure, without using coolant, using thesame workpiece and same test parameters as comparative working example19. The PCD tables of working examples 21a, 21b, and 21c were able tocut a distance of about 3250, about 3500, and about 3800 linear feet,respectively, in the workpiece prior to failure. Thus, the PCD tables ofeach PDC were significantly more thermally stable than the PCD table ofcomparative working example 19 and the leached PCD table of comparativeworking example 20.

While various aspects and embodiments have been disclosed herein, otheraspects and embodiments are contemplated. The various aspects andembodiments disclosed herein are for purposes of illustration and arenot intended to be limiting. Additionally, the words “including,”“having,” and variants thereof (e.g., “includes” and “has”) as usedherein, including the claims, shall have the same meaning as the word“comprising” and variants thereof (e.g., “comprise” and “comprises”).

What is claimed is:
 1. A polycrystalline diamond compact, comprising: acemented carbide substrate including a first cemented carbide portionhaving a lateral periphery and a second cemented chromium carbideportion bonded to and substantially surrounding the lateral periphery ofthe first cemented carbide portion, the second cemented chromium carbideportion exhibiting a second erosion resistance that is greater than afirst erosion resistance exhibited by the first cemented carbideportion, the second cemented chromium carbide portion exhibiting aconcentration of chromium carbide that is greater than that of the firstcemented carbide portion; and a polycrystalline diamond table bonded tothe first cemented carbide portion, the polycrystalline diamond tableincluding a plurality of bonded diamond grains exhibitingdiamond-to-diamond bonding therebetween, the plurality of bonded diamondgrains defining a plurality of interstitial regions.
 2. Thepolycrystalline diamond compact of claim 1 wherein the first cementedcarbide portion comprises a first concentration of chromium carbide ofabout 0.70 weight (“wt”) % to about 0.80 wt % chromium carbide and thesecond cemented carbide portion comprises a second concentration ofchromium carbide of about 1.0 wt % to about 2.0 wt % chromium carbide.3. The polycrystalline diamond compact of claim 2 wherein the secondconcentration of chromium carbide is about 1.1 to about 1.7 times thefirst concentration of chromium carbide.
 4. The polycrystalline diamondcompact of claim 1 wherein at least a portion of the polycrystallinediamond table exhibits a chromium concentration of less than about 1.0weight % (“wt %”).
 5. The polycrystalline diamond compact of claim 4wherein the polycrystalline diamond table is substantially free ofchromium.
 6. The polycrystalline diamond compact of claim 4 wherein thechromium concentration is less than about 0.25 wt %.
 7. Thepolycrystalline diamond compact of claim 1 wherein the first cementedcarbide portion is disposed between the polycrystalline diamond tableand the second cemented carbide portion.
 8. The polycrystalline diamondcompact of claim 1 wherein the first cemented carbide portion exhibits asubstantially conical geometry.
 9. The polycrystalline diamond compactof claim 1, further comprising an interface between the first cementedcarbide portion and the second cemented carbide substrate.
 10. Thepolycrystalline diamond compact of claim 1 wherein the polycrystallinediamond table is integrally formed with the first cemented carbideportion.
 11. The polycrystalline diamond compact of claim 1 wherein thepolycrystalline diamond table is a preformed polycrystalline diamondtable.
 12. The polycrystalline diamond compact of claim 1 wherein thepolycrystalline diamond table comprises a leached region from whichmetal-solvent catalyst has been depleted from at least some of theplurality of interstitial regions.
 13. The polycrystalline diamondcompact of claim 1 wherein the first cemented carbide portion exhibits afirst thickness of about 0.0050 inch to about 0.100 inch, and the secondcemented carbide portion exhibits a second thickness of about 0.30 inchto about 0.60 inch.
 14. The polycrystalline diamond compact of claim 13wherein the first thickness is about 0.0050 inch to about 0.030 inch.15. The polycrystalline diamond compact of claim 1 wherein the secondcemented carbide portion comprises chromium carbide.
 16. Thepolycrystalline diamond compact of claim 1 wherein the cemented carbidesubstrate exhibits a first thickness of about 0.0050 inch to about 0.100inch, and the cemented carbide support exhibits a second thickness ofabout 0.30 inch to about 0.60 inch.
 17. The polycrystalline diamondcompact of claim 16 wherein the first thickness is about 0.0050 inch toabout 0.030 inch.
 18. The polycrystalline diamond compact of claim 1wherein the first cemented carbide portion is substantially free ofchromium.
 19. A polycrystalline diamond compact, comprising: apolycrystalline diamond table including a plurality of bonded diamondgrains exhibiting diamond-to-diamond bonding therebetween, the pluralityof bonded diamond grains defining a plurality of interstitial regions; acemented carbide substrate bonded to the polycrystalline diamond table,the cemented carbide substrate including a substantially conicalgeometry; and a cemented carbide support including a recess thatreceives at least a portion of the cemented carbide substrate, thecemented carbide support bonded to the cemented carbide substrate, thecemented carbide support exhibits a concentration of chromium carbidethat is greater than that of the cemented carbide substrate.
 20. Thepolycrystalline diamond compact of claim 19 wherein the wear property iserosion resistance.
 21. The polycrystalline diamond compact of claim 19wherein the cemented carbide support exhibits at least one of acorrosion resistance or an erosion resistance that is greater than thatexhibited by the cemented carbide substrate.
 22. The polycrystallinediamond compact of claim 19 wherein the cemented carbide substratecomprises a first concentration of chromium carbide of about 0.70 weight(“wt”) % to about 0.80 wt % chromium carbide and the cemented carbidesupport comprises a second concentration of chromium carbide of about1.0 wt % to about 2.0 wt % chromium carbide.
 23. The polycrystallinediamond compact of claim 22 wherein the second concentration of chromiumcarbide is about 1.1 to about 1.7 times the first concentration ofchromium carbide.
 24. The polycrystalline diamond compact of claim 19wherein at least a portion of the polycrystalline diamond table exhibitsa chromium concentration of less than about 1.0 weight % (“wt %”). 25.The polycrystalline diamond compact of claim 19 wherein thepolycrystalline diamond table is substantially free of chromium.
 26. Thepolycrystalline diamond compact of claim 19, further comprising aninterface between the cemented carbide substrate and the cementedcarbide support.
 27. The polycrystalline diamond compact of claim 19wherein the polycrystalline diamond table is integrally formed with thefirst cemented carbide portion.
 28. The polycrystalline diamond compactof claim 19 wherein the polycrystalline diamond table is a preformedpolycrystalline diamond table.
 29. The polycrystalline diamond compactof claim 19 wherein the polycrystalline diamond table comprises aleached region from which metal-solvent catalyst has been depleted fromat least some of the plurality of interstitial regions.
 30. Thepolycrystalline diamond compact of claim 19 wherein the cemented carbidesubstrate is substantially free of chromium.